F.E. Najjar

Lattice-strained heterojunction InGaAs/GaAs bipolar structures: Recombination properties and device performance

L.P. Ramberg, P.M. Enquist, Y.-K. Chen et al. · Journal of Applied Physics · 1987 · 54 citations

Engineering, Electrical Engineering, Materials Science +17

Monolithic integration of complementary HBTs by selective MOVPE

D.B. Slater, P.M. Enquist, F.E. Najjar et al. · IEEE Electron Device Letters · 1990 · 29 citations

Engineering, Electrical Engineering, Materials Science +16

Observation of high-frequency high-field instability in GaAs/InGaAs/AlGaAs DH-MODFETs at K band

Y.K. Chen, D.C. Radulescu, G.W. Wang et al. · IEEE Electron Device Letters · 1988 · 26 citations

Engineering, Electrical Engineering, Materials Science +17

Heterojunction bipolar transistor using pseudomorphic GaInAs for the base

P.M. Enquist, L. R. Ramberg, F.E. Najjar et al. · Applied Physics Letters · 1986 · 21 citations

Engineering, Electrical Engineering, Materials Science +12

dc characterization of the AlGaAs/GaAs tunneling emitter bipolar transistor

F.E. Najjar, D.C. Radulescu, Y.-K. Chen et al. · Applied Physics Letters · 1987 · 21 citations

Engineering, Electrical Engineering, Materials Science +17