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Heterojunction bipolar transistor using pseudomorphic GaInAs for the base

P.M. Enquist, L. R. Ramberg, F.E. Najjar, W. J. Schaff, L.F. Eastman

Applied Physics Letters · 1986 · 21 citations · 3 references

DOI

Concepts

Abstract

We report on replacing the GaAs base in the AlGaAs/GaAs heterojunction bipolar transistor with pseudomorphic GaInAs. Base regions consisting of uniform Ga0.95In0.05As and graded Ga1−yInyAs (y=0.0–0.05) are compared to base regions consisting of GaAs. The highest dc common emitter current gain is obtained with the graded Ga1−yInyAs base.

References

3

An In<sub>0.15</sub>Ga<sub>0.85</sub>As/GaAs pseudomorphic single quantum well HEMT

J.J. Rosenberg, Mourad Benlamri, P. D. Kirchner et al. · IEEE Electron Device Letters · 1985 · 194 citations

, , +17

Current Gain Enhancement in Graded Base AlGaAs/GaAs HBTs Associated with Electron Drift Motion

Hiroshi Itô, Tadao Ishibashi, T. Sugeta · Japanese Journal of Applied Physics · 1985 · 52 citations

, , +17

High-gain, high-frequency AlGaAs/GaAs graded band-gap base bipolar transistors with a Be diffusion setback layer in the base

R. J. Malik, Federico Capasso, R. A. Stall et al. · Applied Physics Letters · 1985 · 42 citations · Full text

, , +17