T. Sugeta - Concepedia

Author

T. Sugeta

NTT (Japan)

Also Known As

T. Sugeta, TAKAYUKI SUGETA, Takayuki SUGETA, Takayuki Sugeta

Publications

919

Citations

H-Index

Concepts

All Affiliations

NTT (Japan)The University of Tokyo NTT Basic Research Laboratories

About

T. Sugeta is an author at NTT (Japan) specializing in electrical engineering, engineering, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	15	21	773
2	Electrical Engineering	15	20	762
3	Applied Physics	13	15	591
4	Physics	4	4	177
5	Materials Science	2	2	47

T. Sugeta

Publications

820

Citations

H-Index

Page 1

	Year	Citations
Metal-Semiconductor-Metal Photodetector for High-Speed Optoelectronic Circuits T. Sugeta, Tsuneo Urisu, Seizo Sakata, Japanese Journal of Applied Physics Optical MaterialsEngineeringMetal-semiconductor-metal PhotodetectorOptoelectronic DevicesSemiconductors	1980	94
Emitter-Base Junction Size Effect on Current Gain H<sub>fe</sub> of AlGaAs/GaAs Heterojunction Bipolar Transistors O. Nakajima, Koichi Nagata, Hiroshi Itô, Japanese Journal of Applied Physics Semiconductor TechnologyElectrical EngineeringEngineeringNanoelectronicsBias Temperature Instability	1985	94
Uniplanar MMICs and their applications M. Muraguchi, Takeshi Hirota, Akira Minakawa, IEEE Transactions on Microwave Theory and Techniques EngineeringUniplanar MmicsOscillatorsRadio FrequencyMicrowave Transmission	1988	93
Suppression of Emitter Size Effect on Current Gain in AlGaAs/GaAs HBTs O. Nakajima, Koichi Nagata, Hiroshi Itô, Japanese Journal of Applied Physics Emitter Size EffectElectrical EngineeringEngineeringElectronic EngineeringCurrent Gain	1985	65
High Speed Photoresponse Mechanism of a GaAs-MESFET T. Sugeta, Yoshihiko Mizushima Japanese Journal of Applied Physics PhotonicsElectrical EngineeringSemiconductor DeviceEngineeringRf Semiconductor	1980	65
High-frequency characteristics of AlGaAs/GaAs heterojunction bipolar transistors Hiroshi Itô, T. Ish, T. Sugeta IEEE Electron Device Letters SemiconductorsWide-bandgap SemiconductorElectrical EngineeringSemiconductor DeviceEngineering	1984	64
Current Gain Enhancement in Graded Base AlGaAs/GaAs HBTs Associated with Electron Drift Motion Hiroshi Itô, Tadao Ishibashi, T. Sugeta Japanese Journal of Applied Physics Wide-bandgap SemiconductorElectrical EngineeringCurrent Gain EnhancementElectron Drift MotionEngineering	1985	52
WP-B2 high-gain metal&#8212;Semiconductor&#8212;Metal photodetectors for high-speed optoelectronic circuits T. Sugeta, T. Urisu IEEE Transactions on Electron Devices	1979	47
Characteristics and applications of a Schottky-barrier-gate Gunn-effect digital-device T. Sugeta, M. Tanimoto, T. Ikoma, IEEE Transactions on Electron Devices Schottky-barrier-gate Gunn-effect Digital-deviceShort Delay TimeElectrical EngineeringEngineeringHigh-frequency Device	1974	36
Extremely Low Resistance Ohmic Contacts to n-GaAs for AlGaAs/GaAs Heterojunction Bipolar Transistors Hiroshi Itô, Tadao Ishibashi, T. Sugeta Japanese Journal of Applied Physics SemiconductorsMaterials ScienceElectrical EngineeringElectronic DevicesFine Emitter	1984	26

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