D.C. Radulescu

Influence of quantum-well width on device performance of Al/sub 0.30/Ga/sub 0.70/As/In/sub 0.25/Ga/sub 0.75/As (on GaAs) MODFETs

L.D. Nguyen, D.C. Radulescu, M. Foisy et al. · IEEE Transactions on Electron Devices · 1989 · 65 citations

Engineering, Electrical Engineering, Materials Science +17

Characterization of ultra-high-speed pseudomorphic AlGaAs/InGaAs (on GaAs) MODFETs

L.D. Nguyen, P.J. Tasker, D.C. Radulescu et al. · IEEE Transactions on Electron Devices · 1989 · 63 citations

Engineering, Electrical Engineering, Materials Science +17

0.2- mu m gate-length atomic-planar doped pseudomorphic Al/sub 0.3/Ga/sub 0.7/As/In/sub 0.25/Ga/sub 0.75/As MODFETs with f/sub T/ over 120 GHz

L.D. Nguyen, D.C. Radulescu, P.J. Tasker et al. · IEEE Electron Device Letters · 1988 · 50 citations

Engineering, Electrical Engineering, Materials Science +17

A high-current pseudomorphic AlGaAs/InGaAs double quantum-well MODFET

G.W. Wang, Y.K. Chen, D.C. Radulescu et al. · IEEE Electron Device Letters · 1988 · 45 citations

Engineering, Electrical Engineering, Materials Science +17

Influence of substrate temperature and InAs mole fraction on the incorporation of indium during molecular-beam epitaxial growth of InGaAs single quantum wells on GaAs

D.C. Radulescu, W. J. Schaff, L.F. Eastman et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1989 · 44 citations

Engineering, Materials Science, Physics +17