M. Foisy

VBIC95, the vertical bipolar inter-company model

Colin C. McAndrew, J.A. Seitchik, Derek F. Bowers et al. · IEEE Journal of Solid-State Circuits · 1996 · 238 citations

Engineering, Electrical Engineering, Circuit Theory +16

The role of inefficient charge modulations in limiting the current-gain cutoff frequency of the MODFET

M. Foisy, P.J. Tasker, B. Hughes et al. · IEEE Transactions on Electron Devices · 1988 · 84 citations

Engineering, Electrical Engineering, Microelectronics +13

Influence of quantum-well width on device performance of Al/sub 0.30/Ga/sub 0.70/As/In/sub 0.25/Ga/sub 0.75/As (on GaAs) MODFETs

L.D. Nguyen, D.C. Radulescu, M. Foisy et al. · IEEE Transactions on Electron Devices · 1989 · 65 citations

Engineering, Electrical Engineering, Materials Science +17

VBIC95: An improved vertical, IC bipolar transistor model

Colin C. McAndrew, J.A. Seitchik, Derek F. Bowers et al. · 2002 · 53 citations

Engineering, Electrical Engineering, Circuit Theory +16

Charge control, DC, and RF performance of a 0.35- mu m pseudomorphic AlGaAs/InGaAs modulation-doped field-effect transistor

L.D. Nguyen, W. J. Schaff, P.J. Tasker et al. · IEEE Transactions on Electron Devices · 1988 · 45 citations

Engineering, Electrical Engineering, Materials Science +17