Study of RF N− LDMOS critical electrical parameter drifts after a thermal and electrical ageing in pulsed RF

Failure mechanisms in semiconductor devices

D.J.S. · Microelectronics Reliability · 1988 · 164 citations

Electrical Engineering, Reliability Engineering, Engineering +5

Experimental study of hot-carrier effects in LDMOS transistors

R. Versari, A. Pieracci · IEEE Transactions on Electron Devices · 1999 · 77 citations

Device Modeling, Smart Power Applications, Electrical Engineering +12

Simulation of nonequilibrium thermal effects in power LDMOS transistors

Ashok Raman, D. G. Walker, Timothy S. Fisher · Solid-State Electronics · 2003 · 68 citations

Electrical Engineering, Engineering, Bias Temperature Instability +8

Analysis of hot-carrier degradation in a SOI LDMOS transistor with a steep retrograde drift doping profile

J. Roig, D. Flores, J. Urresti et al. · Microelectronics Reliability · 2004 · 39 citations

Steep Retrograde Drift, Electrical Engineering, Hot-carrier Degradation +7

A high performance RF LDMOSFET in thin film SOI technology with step drift profile

Jun Luo, G. Cao, M.M. De Souza · Solid-State Electronics · 2003 · 38 citations

Electrical Engineering, Engineering, Rf Semiconductor +8