J. Urresti - Concepedia

Author

J. Urresti

Also Known As

J Urresti, J. Urresti, J. Urresti-Ibanez, J. Urresti-Ibañez, Jesus Urresti, Jesus Urresti Ibanez, Jesus Urresti-Ibanez, Jesús Urresti, Jesús Urresti-Ibanez

Publications

520

Citations

H-Index

Concepts

All Affiliations

Newcastle University Centro Nacional de Microelectrónica University of Nottingham University of Naples Federico II Alstom (France)

About

J. Urresti is an author at Newcastle University specializing in engineering, electrical engineering, and microelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	13	14	438
2	Electrical Engineering	13	14	438
3	Applied Physics	5	5	163
4	Computer Engineering	2	2	28
5	Physics	1	1	43

J. Urresti

Publications

438

Citations

H-Index

Page 1

	Year	Citations
Analysis of Clamped Inductive Turnoff Failure in Railway Traction IGBT Power Modules Under Overload Conditions X. Perpiñà, J.F. Servière, J. Urresti, IEEE Transactions on Industrial Electronics Electrical EngineeringOverload ConditionsEngineeringHigh Voltage EngineeringPower Device	2010	55
UIS failure mechanism of SiC power MOSFETs Asad Fayyaz, Alberto Castellazzi, G. Romano, ReliabilityElectrical EngineeringReliability EngineeringEngineeringPower Device	2016	52
A Comprehensive Study on the Avalanche Breakdown Robustness of Silicon Carbide Power MOSFETs Asad Fayyaz, G. Romano, J. Urresti, Energies Comprehensive StudyElectrical EngineeringEngineeringPower DeviceNanoelectronics	2017	45
Increased Mobility in Enhancement Mode 4H-SiC MOSFET Using a Thin SiO<sub>2</sub>/ Al<sub>2</sub>O<sub>3</sub>Gate Stack Faiz Arith, J. Urresti, Konstantin Vasilevskiy, IEEE Electron Device Letters Device ModelingSemiconductorsElectrical EngineeringSemiconductor TechnologyEngineering	2018	43
Analysis of hot-carrier degradation in a SOI LDMOS transistor with a steep retrograde drift doping profile J. Roig, D. Flores, J. Urresti, Microelectronics Reliability Steep Retrograde DriftElectrical EngineeringHot-carrier DegradationEngineeringElectronic Engineering	2004	39
IGBT module failure analysis in railway applications X. Perpiñà, J.F. Servière, X. Jordà, Microelectronics Reliability ReliabilityRailway TrafficElectrical EngineeringReliability EngineeringEngineering	2008	39
Design and Analysis of High Mobility Enhancement-Mode 4H-SiC MOSFETs Using a Thin-SiO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub>Gate-Stack J. Urresti, Faiz Arith, Sarah H. Olsen, IEEE Transactions on Electron Devices Semiconductor TechnologyElectrical Engineering4H-sic MosfetsEngineeringSemiconductor Device	2019	29
Layout Role in Failure Physics of IGBTs Under Overloading Clamped Inductive Turnoff X. Perpiñà, Ignasi Cortés, J. Urresti, IEEE Transactions on Electron Devices Device ModelingElectrical EngineeringEngineeringHardware ReliabilityChip Core	2012	28
Transient out-of-SOA robustness of SiC power MOSFETs Alberto Castellazzi, Asad Fayyaz, G. Romano, Electrical EngineeringEngineeringPower DeviceOverload Operational ConditionsNanoelectronics	2017	25
A numerical study of field plate configurations in RF SOI LDMOS transistors J. Roig, D. Flores, J. Urresti, Solid-State Electronics Device ModelingNumerical StudyElectrical EngineeringEngineeringRf Semiconductor	2005	23

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