Empirical modeling for gate-controlled collector current of lateral bipolar transistors in an n-MOSFET structure

BSIM: Berkeley short-channel IGFET model for MOS transistors

B.J. Sheu, D.L. Scharfetter, P.K. Ko et al. · IEEE Journal of Solid-State Circuits · 1987 · 585 citations

Engineering, Computer Engineering, Electrical Engineering +17

Low level currents in insulated gate field effect transistors

M.B. Barron · Solid-State Electronics · 1972 · 108 citations

Engineering, Electrical Engineering, Microelectronics +13

High-gain lateral bipolar action in a MOSFET structure

S. Verdonckt-Vandebroek, S.S. Wong, J.C.S. Woo et al. · IEEE Transactions on Electron Devices · 1991 · 107 citations

Engineering, Electrical Engineering, Microelectronics +13

Low-level currents in insulated gate field effect transistors

Microelectronics Reliability · 1972 · 105 citations

Engineering, Electrical Engineering, Microelectronics +13

SPICE Modeling for Small Geometry MOSFET Circuits

Ping Yang, P.K. Chatterjee · IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems · 1982 · 77 citations

Engineering, Computer Engineering, Electrical Engineering +17