IEEE Transactions on Electron Devices · 1991 · 107 citations · 32 references
EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesSemiconductor MaterialsBipolar Junction TransistorsCmos Circuit DesignComplementary Metal-oxide-semiconductor TechnologyIntegrated Circuit DesignMetal-oxide-semiconductor Field-effect TransistorsP-n JunctionsCmos Fabrication ProcessesCurrent GainGainGain EnhancementP-n Junction Characteristics
A hybrid-mode device based on a standard submicrometer CMOS technology is presented. The device is essentially a MOSFET in which the gate and the well are internally connected to form the base of a lateral bipolar junction transistor (BJT). At low collector current levels, lateral bipolar action with a current gain higher than 1000 is achieved. No additional processing steps are needed to obtain the BJT when the MOSFET is properly designed. n-p-n BJTs with a 0.25- mu m base width have been successfully fabricated in a p-well 0.25- mu m bulk n-MOSFET process. The electrical characteristics of the n-MOSFET and the lateral n-p-n BJT at room and liquid nitrogen temperatures are reported.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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Very small MOSFET's for low-temperature operation
F.H. Gaensslen, V.L. Rideout, E.J. Walker et al. · IEEE Transactions on Electron Devices · 1977 · 303 citations