Applied Physics Letters · 2010 · 31 citations · 6 references
EngineeringHalide PerovskitesPerovskite ModuleBand GapCrystallization BehaviorSrxtiyoz FilmsElectrochemical InterfaceMaterials ScienceOxide HeterostructuresElectrical EngineeringLeakage BehaviorCrystalline DefectsOxide ElectronicsPerovskite MaterialsLead-free PerovskitesElectrochemistryMaterial AnalysisPerovskite Solar CellSurface ScienceApplied PhysicsMetastable Perovskite SrxtiyozThin FilmsTin ElectrodesElectrical Insulation
Metastable perovskite SrxTiyOz (STO) films were formed over a wide composition range by crystallization of layers grown by atomic layer deposition. An expansion of the lattice, decrease in permittivity and mild increase in band gap are observed with increasing Sr content. Sr-rich films [Sr/(Sr+Ti)∼62 at. %] show significant improvement in leakage current at low equivalent oxide thicknesses (EOT) as compared to stoichiometric films (Sr/(Sr+Ti) ∼50 at. %). TiN/STO/TiN capacitors with leakage ∼10−6 A/cm2 at 1 V were obtained at 0.6 nm EOT for crystalline Sr-rich STO. The difference in leakage behavior was found to correlate with different microstructures developed during crystallization.
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Sang Woon Lee, Oh Seong Kwon, Jeong Hwan Han et al. · Applied Physics Letters · 2008 · 120 citations
Non-volatile Memory, Engineering, Emerging Memory Technology +18
Chang Seok Kang, Cheol Seong Hwang, Hag‐Ju Cho et al. · Japanese Journal of Applied Physics · 1996 · 52 citations