Johan Swerts

High-k dielectrics for future generation memory devices (Invited Paper)

J. A. Kittl, Karl Opsomer, M. Popovici et al. · Microelectronic Engineering · 2009 · 250 citations

Natural Sciences, Materials Engineering, Materials Science +16

SOT-MRAM 300MM Integration for Low Power and Ultrafast Embedded Memories

Kévin Garello, Faisal Mohd-Yasin, Sébastien Couet et al. · 2018 · 186 citations · Full text

Engineering, Electrical Engineering, Materials Science +15

Manufacturable 300mm platform solution for Field-Free Switching SOT-MRAM

Kévin Garello, Faisal Mohd-Yasin, Hubert Hody et al. · 2019 · 106 citations · Full text

Engineering, Computer Engineering, Electrical Engineering +14

Alternative metals for advanced interconnects

Christoph Adelmann, Liang Wen, Antony Premkumar Peter et al. · 2014 · 90 citations

Engineering, Electrical Engineering, Materials Engineering +17

Vacancy-modulated conductive oxide resistive RAM (VMCO-RRAM): An area-scalable switching current, self-compliant, highly nonlinear and wide on/off-window resistive switching cell

B. Govoreanu, A. Redolfi, L. Zhang et al. · 2013 · 78 citations

Engineering, Electrical Engineering, Materials Science +16