Johan Swerts

High-k dielectrics for future generation memory devices (Invited Paper)

J. A. Kittl, Karl Opsomer, M. Popovici et al. · Microelectronic Engineering · 2009 · 246 citations

Electrical Engineering, Semiconductor Device, Engineering +7

SOT-MRAM 300MM Integration for Low Power and Ultrafast Embedded Memories

Kévin Garello, Faisal Mohd-Yasin, Sébastien Couet et al. · 2018 · 177 citations · Full text

Manufacturable 300mm platform solution for Field-Free Switching SOT-MRAM

Kévin Garello, Faisal Mohd-Yasin, Hubert Hody et al. · 2019 · 103 citations · Full text

Spintronics, Electrical Engineering, Non-volatile Memory +12

Alternative metals for advanced interconnects

Christoph Adelmann, Liang Wen, Antony Premkumar Peter et al. · 2014 · 87 citations

Materials Science, Materials Engineering, Electrical Engineering +14

Vacancy-modulated conductive oxide resistive RAM (VMCO-RRAM): An area-scalable switching current, self-compliant, highly nonlinear and wide on/off-window resistive switching cell

B. Govoreanu, A. Redolfi, L. Zhang et al. · 2013 · 78 citations

Vertical Rram Requirements, Electrical Engineering, Non-volatile Memory +12