Kazuyuki Tomida

High-k dielectrics for future generation memory devices (Invited Paper)

J. A. Kittl, Karl Opsomer, M. Popovici et al. · Microelectronic Engineering · 2009 · 246 citations

Electrical Engineering, Semiconductor Device, Engineering +7

Dielectric constant enhancement due to Si incorporation into HfO2

Kazuyuki Tomida, Koji Kita, Akira Toriumi · Applied Physics Letters · 2006 · 192 citations

Engineering, Silicon On Insulator, Dielectric Constant Change +17

Composition influence on the physical and electrical properties of SrxTi1−xOy-based metal-insulator-metal capacitors prepared by atomic layer deposition using TiN bottom electrodes

N. Menou, M. Popovici, Sergiu Clima et al. · Journal of Applied Physics · 2009 · 60 citations · Full text

Materials Science, Oxide Heterostructures, Electrical Engineering +14

Doped HfO2 for Higher-k Dielectrics

Akira Toriumi, Koji Kita, Kazuyuki Tomida et al. · ECS Transactions · 2006 · 34 citations

Engineering, Pure Hfo2, Epitaxial Growth +16

Impact of crystallization behavior of SrxTiyOz films on electrical properties of metal-insulator-metal capacitors with TiN electrodes

Małgorzata Pawlak, B. Kaczer, M.-S. Kim et al. · Applied Physics Letters · 2010 · 31 citations

Engineering, Halide Perovskites, Perovskite Module +21