Emerging Yield and Reliability Challenges in Nanometer CMOS Technologies

Georges Gielen, Pieter De Wit, Elie Maricau, +6

2008 Design, Automation and Test in Europe

ReliabilityElectrical EngineeringNanometer Cmos TechnologiesEngineeringHardware Reliability +12

Temperature dependence of the negative bias temperature instability in the framework of dispersive transport

B. Kaczer, R. Degraeve, Nadine Collaert, +2

Applied Physics Letters

EngineeringUltrathin Gate OxideTemperature DependenceScalar TransportDispersion +17

Ballistic-electron emission microscopy studies of charge trapping in SiO2

B. Kaczer, J. P. Pelz

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena

EngineeringTrapped Charge DensityVacuum DeviceSilicon On InsulatorCharge Transport +17

Photo-carrier generation as the origin of Fowler-Nordheim-induced substrate hole current in thin oxides

Mahmoud Rasras, Ingrid De Wolf, G. Groeseneken, +3

IEEE Transactions on Electron Devices

EngineeringThin OxidesPhoto-electrochemical CellSemiconductor DeviceNanoelectronics +15

Ballistic electron emission microscopy study of Schottky contacts on 6H- and 4H-SiC

Honggu Im, B. Kaczer, J. P. Pelz, +1

Applied Physics Letters

Materials ScienceSemiconductor TechnologyElectrical EngineeringElectronic DevicesEngineering +9

Impact of crystallization behavior of SrxTiyOz films on electrical properties of metal-insulator-metal capacitors with TiN electrodes

Małgorzata Pawlak, B. Kaczer, M.-S. Kim, +15

Applied Physics Letters

EngineeringHalide PerovskitesPerovskite ModuleBand GapCrystallization Behavior +19

Defect-centric perspective of time-dependent BTI variability

M. Toledano-Luque, B. Kaczer, J. Franco, +3

Microelectronics Reliability

ReliabilityReliability EngineeringEngineeringMeasurementUncertainty Quantification +6

Nanometer-scale investigation of metal-SiC interfaces using ballistic electron emission microscopy

Honggu Im, B. Kaczer, J. P. Pelz, +3

Journal of Electronic Materials

Materials ScienceEngineeringNanotechnologyNanometer-scale InvestigationSurface Science +5

FinFET and MOSFET preliminary comparison of gate oxide reliability

R. Fernández, R. Rodríguez, M. Nafrı́a, +3

Microelectronics Reliability

ReliabilityElectrical EngineeringReliability EngineeringEngineeringMosfet Preliminary Comparison +5