W. Polspoel

High-k dielectrics for future generation memory devices (Invited Paper)

J. A. Kittl, Karl Opsomer, M. Popovici et al. · Microelectronic Engineering · 2009 · 250 citations

Natural Sciences, Materials Engineering, Materials Science +16

Composition influence on the physical and electrical properties of SrxTi1−xOy-based metal-insulator-metal capacitors prepared by atomic layer deposition using TiN bottom electrodes

N. Menou, M. Popovici, Sergiu Clima et al. · Journal of Applied Physics · 2009 · 61 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17

Conductive atomic force microscopy studies of thin SiO2 layer degradation

Patrick Fiorenza, W. Polspoel, Wilfried Vandervorst · Applied Physics Letters · 2006 · 46 citations

Natural Sciences, Materials Engineering, Materials Science +17

Evaluation of trap creation and charging in thin SiO2 using both SCM and C-AFM

W. Polspoel, Wilfried Vandervorst · Microelectronic Engineering · 2006 · 32 citations

Natural Sciences, Materials Engineering, Materials Science +9

Impact of crystallization behavior of SrxTiyOz films on electrical properties of metal-insulator-metal capacitors with TiN electrodes

Małgorzata Pawlak, B. Kaczer, M.-S. Kim et al. · Applied Physics Letters · 2010 · 31 citations

Natural Sciences, Materials Engineering, Materials Science +17