Concepedia

Very High Density (44 fF∕μm[sup 2]) SrTiO[sub 3] MIM Capacitors for RF Applications

K.C. Chiang, Jun-Ting Lin, Han Pan, C. N. Hsiao, W.J. Chen, Hsuan‐Ling Kao, I−Ta Hsieh, Albert Chin

Journal of The Electrochemical Society · 2007 · 12 citations · 13 references

Abstract

We demonstrate a high-performance metal-insulator-metal (MIM) radio-frequency (rf) capacitor with good device integrity of very high capacitance density of , small voltage linearity α of at , and a small capacitance reduction 3.5% from to . Such large capacitance density can largely reduce the device size used in rf integrated circuits.

References

13

Analog characteristics of metal-insulator-metal capacitors using PECVD nitride dielectrics

J.A. Babcock, S. Balster, A. Pinto et al. · IEEE Electron Device Letters · 2001 · 179 citations

Engineering, Electrical Engineering, Analog Electronics +12

High-density MIM capacitors using Al<sub>2</sub>O<sub>3</sub> and AlTiO<sub>x</sub> dielectrics

S.B. Chen, Chyong‐Huey Lai, Albert Chin et al. · IEEE Electron Device Letters · 2002 · 168 citations

Engineering, Electrical Engineering, Materials Science +12

High-Q capacitors implemented in a CMOS process for low-power wireless applications

Chih-Ming Hung, Y.-C. Ho, I-Feng Wu et al. · IEEE Transactions on Microwave Theory and Techniques · 1998 · 107 citations

Engineering, Electrical Engineering, Analog Electronics +16

Improvement of Voltage Linearity in High-&lt;tex&gt;$kappa$&lt;/tex&gt;MIM Capacitors Using&lt;tex&gt;$hbox HfO_2hbox --hbox SiO_2$&lt;/tex&gt;Stacked Dielectric

S.J. Kim, Byung Jin Cho, M.F. Li et al. · IEEE Electron Device Letters · 2004 · 94 citations

Natural Sciences, Electrical Engineering, Materials Science +15

High-Performance$hboxSrTiO_3$MIM Capacitors for Analog Applications

K.C. Chiang, C.-C. Huang, G.L. Chen et al. · IEEE Transactions on Electron Devices · 2006 · 91 citations

Engineering, Electrical Engineering, Materials Science +9