Concepedia

Parasitic Capacitance Reduction

Parasitic Capacitance Reduction is a semiconductor device optimization technique that minimizes unintended capacitive coupling within high-frequency structures by altering physical layout or material properties to enhance device speed and performance.

738

Publications

25.1K

Citations

3.1K

Authors

601

Institutions

Publications per year

2017–2026

179

Parents

Publications

738

The effect of high fields on MOS device and circuit performance

C.G. Sodini, Ping-Keung Ko, J.L. Moll · IEEE Transactions on Electron Devices · 1984 · 295 citations

, , +16

The class-E/F family of ZVS switching amplifiers

S. Kee, Ichiro Aoki, Ali Hajimiri et al. · IEEE Transactions on Microwave Theory and Techniques · 2003 · 292 citations

, , +14

Reduction in the reset current in a resistive random access memory consisting of NiOx brought about by reducing a parasitic capacitance

Kentaro Kinoshita, K. Tsunoda, Yoshihiro Sato et al. · Applied Physics Letters · 2008 · 270 citations

, , +13

High-voltage, high-power, ZVS, full-bridge PWM converter employing an active snubber

Juan Sabate, V. Vlatkovic, R.B. Ridley et al. · 2002 · 203 citations

, , +16

LLC Converters With Planar Transformers: Issues and Mitigation

Mohammad Ali Saket, Navid Shafiei, Martin Ordonez · IEEE Transactions on Power Electronics · 2016 · 199 citations

, , +16

1–5 of 738

Authors

3.1K

  1. CL
    Chun‐Yu Lin

    National Yang Ming Chiao Tung University, Taiwan

    10 publications · 281 citations

    10

    h-index

  2. MK
    Ming‐Dou Ker

    National Yang Ming Chiao Tung University, Taiwan

    9 publications · 245 citations

    9

    h-index

  3. HF
    Haigang Feng

    Illinois Institute of Technology, United States

    7 publications · 157 citations

    7

    h-index

  4. SW
    Shuo Wang

    University of Florida, United States

    7 publications · 283 citations

    7

    h-index

  5. MA
    Mohammad Ali Saket

    University of British Columbia, Canada

    5 publications · 401 citations

    5

    h-index

1–5 of 3.1K

Institutions

601

  1. National Yang Ming Chiao Tung University

    Hsinchu, Taiwan

    16 h-index

    62 publications

    2.2K citations

  2. Stanford University

    Stanford, United States

    14 h-index

    67 publications

    2.8K citations

  3. Georgia Institute of Technology

    Atlanta, United States

    14 h-index

    61 publications

    2.1K citations

  4. IBM (United States)

    Armonk, United States

    13 h-index

    102 publications

    3.8K citations

  5. Massachusetts Institute of Technology

    Cambridge, United States

    13 h-index

    34 publications

    1.9K citations

  6. University of California, Los Angeles

    Los Angeles, United States

    13 h-index

    26 publications

    878 citations

  7. Texas Instruments (United States)

    Dallas, United States

    12 h-index

    38 publications

    965 citations

  8. Fujitsu (Japan)

    Kawasaki, Japan

    12 h-index

    55 publications

    2.8K citations

1–8 of 601

Venues

  1. IEEE Transactions on Electron Devices

    52 publications · 2K citations

    27

    h-index

  2. IEEE Electron Device Letters

    45 publications · 1.5K citations

    24

    h-index

  3. IEEE Transactions on Power Electronics

    24 publications · 1.3K citations

    23

    h-index

  4. IEEE Journal of Solid-State Circuits

    23 publications · 1.2K citations

    19

    h-index

  5. 18

    h-index

1–5