S.B. Chen

High-density MIM capacitors using Al₂O₃ and AlTiO_x dielectrics

S.B. Chen, Chyong‐Huey Lai, Albert Chin et al. · IEEE Electron Device Letters · 2002 · 168 citations

Materials Science, High-density Mim Capacitors, Electrical Engineering +14

High quality La/sub 2/O/sub 3/ and Al/sub 2/O/sub 3/ gate dielectrics with equivalent oxide thickness 5-10 Å

Albert Chin, Yung‐Hsien Wu, S.B. Chen et al. · 2002 · 58 citations

Materials Engineering, Materials Science, Electrical Engineering +14

Frequency-dependent capacitance reduction in high-k AlTiO<sub>x</sub> and Al<sub>2</sub>O<sub>3</sub> gate dielectrics from IF to RF frequency range

S.B. Chen, Chyong‐Huey Lai, K.T. Chan et al. · IEEE Electron Device Letters · 2002 · 46 citations

Engineering, Radio Frequency, Electromagnetic Compatibility +18

RF MIM capacitors using high-K Al/sub 2/O/sub 3/ and AlTiO/sub x/ dielectrics

S.B. Chen, Chyong‐Huey Lai, Albert Chin et al. · 2003 · 16 citations

Low-power Electronics, Electrical Engineering, Rf Mim Capacitors +11

La₂O₃/Si_0.3Ge_0.7 p-MOSFETs with high hole mobility and good device characteristics

Ching-Ying Huang, S.B. Chen, Albert Chin · IEEE Electron Device Letters · 2002 · 12 citations

High Hole Mobility, Semiconductor Technology, Electrical Engineering +11