2003 · 35 citations · 1 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsMicroelectronicsSemiconductor DevicesDevice ModelingDevice ReliabilityDevice SimulationOxide SemiconductorsPercolation TheorySemiconductor ReliabilityAvalanche BreakdownBreakdown MechanismsBreakdown SimulationInterpreting Experimental DataOxide BreakdownOxide ReliabilityPercolation BehaviorThin-film Oxides
A comprehensive percolation model is used to explore the role of non-uniform trap generation process on oxide breakdown. We show that this non-uniform trap generation (due to SILC and roughness induced localization) makes interpretation of experimental data difficult and can lead to incorrect projections for reliability of ultra-thin oxides.
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