Damascene Process
The "Damascene Process" is a semiconductor fabrication technique that belongs to the class of interconnect formation methods, distinguished by its use of trench and via etching followed by metal deposition and chemical-mechanical polishing to create inlaid conductive patterns within a dielectric layer.
256
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12K
Citations
1.4K
Authors
209
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Publications per year
2017–2026
33
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256
Low dielectric constant materials for microelectronics
Karen Maex, Mikhaı̈l R. Baklanov, Denis Shamiryan et al. · Journal of Applied Physics · 2003 · 1.6K citations
Natural Sciences, Materials Engineering, Materials Science +17
1–5 of 256
1.4K
National Institute of Standards and Technology, United States
8 publications · 696 citations
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IMEC
Leuven, Belgium
13 h-index
155 publications
7K citations
National Institute of Standards and Technology
Gaithersburg, United States
11 h-index
30 publications
2.6K citations
Toshiba (Japan)
Tokyo, Japan
11 h-index
72 publications
2.5K citations
IBM (United States)
Armonk, United States
11 h-index
84 publications
7.3K citations

Centre National de la Recherche Scientifique
Paris, France
10 h-index
30 publications
953 citations
Intel (United States)
Santa Clara, United States
9 h-index
27 publications
464 citations
IBM Research - Thomas J. Watson Research Center
Yorktown Heights, United States
9 h-index
45 publications
8.8K citations

National Yang Ming Chiao Tung University
Hsinchu, Taiwan
9 h-index
26 publications
640 citations
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JES · 28 publications · 1.3K citations
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23 publications · 905 citations
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JJAP · 13 publications · 377 citations
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10 publications · 257 citations
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10 publications · 163 citations
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