T. Conard

Nucleation and growth of atomic layer deposited HfO2 gate dielectric layers on chemical oxide (Si–O–H) and thermal oxide (SiO2 or Si–O–N) underlayers

M. L. Green, M.-Y. Ho, B. Busch et al. · Journal of Applied Physics · 2002 · 279 citations

Natural Sciences, Materials Engineering, Materials Science +17

Characterization of Cu surface cleaning by hydrogen plasma

Mikhaı̈l R. Baklanov, Denis Shamiryan, Zs. Tôkei et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2001 · 111 citations

Natural Sciences, Materials Engineering, Materials Science +17

Controlled Deposition of Organic Contamination and Removal with Ozone-Based Cleanings

M. Claes, Stefan De Gendt, Conny Kenens et al. · Journal of The Electrochemical Society · 2001 · 17 citations

Engineering, Chemical Engineering, Chemistry +16

Impact of the Ge concentration on the Ge-ionisation probability and the matrix sputter yield for a SiGe matrix under oxygen irradiation

Cedric Huyghebaert, T. Conard, Bert Brijs et al. · Applied Surface Science · 2004 · 12 citations

Natural Sciences, Materials Science, Physics +7