Elena Fabris

Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability

Steve Stoffels, Niels Posthuma, Stefaan Decoutere et al. · 2019 · 42 citations

Wide-bandgap Semiconductor, Electrical Engineering, Parasitic Sidewall Transistor +14

Trapping and Detrapping Mechanisms in <i>β</i>-Ga₂O₃ Vertical FinFETs Investigated by Electro-Optical Measurements

Elena Fabris, Carlo De Santi, Alessandro Caria et al. · IEEE Transactions on Electron Devices · 2020 · 35 citations

Transient Grating, Photonics, Electrical Engineering +14

Hot-Electron Trapping and Hole-Induced Detrapping in GaN-Based GITs and HD-GITs

Elena Fabris, Matteo Meneghini, Carlo De Santi et al. · IEEE Transactions on Electron Devices · 2018 · 28 citations

Wide-bandgap Semiconductor, Engineering, Charge Transport +16

200 V GaN-on-SOI Smart Power Platform for Monolithic GaN Power ICs

Thibault Cosnier, Olga Syshchyk, Brice De Jaeger et al. · 2021 IEEE International Electron Devices Meeting (IEDM) · 2021 · 22 citations

Electrical Engineering, Gan Power Circuits, Engineering +13

1.2 kV Enhancement-Mode p-GaN Gate HEMTs on 200 mm Engineered Substrates

S. Kumar, Karen Geens, Anurag Vohra et al. · IEEE Electron Device Letters · 2024 · 18 citations · Full text