Elena Fabris - Concepedia

Author

Elena Fabris

University of Padua ORCID

Also Known As

E. Fabris, Elena Fabris

Publications

257

Citations

H-Index

Concepts

All Affiliations

University of Padua IMEC Ghent University Cornell University

About

Elena Fabris is an author at University of Padua specializing in electrical engineering, microelectronics, and engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	5	5	138
2	Electrical Engineering	5	5	138
3	Applied Physics	4	4	116
4	Physics	3	3	74
5	Computer Engineering	1	1	22

Elena Fabris

Publications

184

Citations

H-Index

Page 1

	Year	Citations
Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability Steve Stoffels, Niels Posthuma, Stefaan Decoutere, Wide-bandgap SemiconductorElectrical EngineeringParasitic Sidewall TransistorEngineeringNanoelectronics	2019	42
Trapping and Detrapping Mechanisms in <i>β</i>-Ga₂O₃ Vertical FinFETs Investigated by Electro-Optical Measurements Elena Fabris, Carlo De Santi, Alessandro Caria, IEEE Transactions on Electron Devices Transient GratingPhotonicsElectrical EngineeringElectro-optical MeasurementsEngineering	2020	35
Hot-Electron Trapping and Hole-Induced Detrapping in GaN-Based GITs and HD-GITs Elena Fabris, Matteo Meneghini, Carlo De Santi, IEEE Transactions on Electron Devices Wide-bandgap SemiconductorEngineeringCharge TransportSemiconductor DevicePdrain Terminal	2018	28
200 V GaN-on-SOI Smart Power Platform for Monolithic GaN Power ICs Thibault Cosnier, Olga Syshchyk, Brice De Jaeger, 2021 IEEE International Electron Devices Meeting (IEDM) Electrical EngineeringGan Power CircuitsEngineeringPower IcPower Device	2021	22
1.2 kV Enhancement-Mode p-GaN Gate HEMTs on 200 mm Engineered Substrates S. Kumar, Karen Geens, Anurag Vohra, IEEE Electron Device Letters	2024	18
Monolithic 650-V Dual-Gate p-GaN Bidirectional Switch G. Baratella, Urmimala Chatterjee, Olga Syshchyk, IEEE Transactions on Electron Devices	2024	18
Demonstration of avalanche capability in polarization-doped vertical GaN pn diodes: study of walkout due to residual carbon concentration Carlo De Santi, Elena Fabris, Kazuki Nomoto, Wide-bandgap SemiconductorElectrical EngineeringResidual Carbon ConcentrationResidual CarbonPhysics	2018	11
Breakdown Walkout in Polarization-Doped Vertical GaN Diodes Elena Fabris, Gaudenzio Meneghesso, Enrico Zanoni, IEEE Transactions on Electron Devices	2019	10

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