Anurag Vohra

Fundamentals of Ge 1−x Sn x and Si y Ge 1−x-y Sn x RPCVD epitaxy

Joe Margetis, Aboozar Mosleh, Seyed Amir Ghetmiri et al. · Materials Science in Semiconductor Processing · 2016 · 41 citations

Semiconductor Technology, Sn X, Physics +5

Fabrication, Characterization, and Analysis of Ge/GeSn Heterojunction p-Type Tunnel Transistors

C. Schulte‐Braucks, Rahul Pandey, Redwan N. Sajjad et al. · IEEE Transactions on Electron Devices · 2017 · 32 citations

Oxide Heterostructures, Semiconductor Technology, Electrical Engineering +10

Very Low Temperature Epitaxy of Group-IV Semiconductors for Use in FinFET, Stacked Nanowires and Monolithic 3D Integration

Clément Porret, Andriy Hikavyy, Juan Fernando Gomez Granados et al. · ECS Journal of Solid State Science and Technology · 2019 · 29 citations · Full text

New Technologies, Engineering, Monolithic 3D +19

Epitaxial GeSn: impact of process conditions on material quality

Roger Loo, Yosuke Shimura, Shinichi Ike et al. · Semiconductor Science and Technology · 2018 · 25 citations

Materials Engineering, Semiconductors, Materials Science +14

200 V GaN-on-SOI Smart Power Platform for Monolithic GaN Power ICs

Thibault Cosnier, Olga Syshchyk, Brice De Jaeger et al. · 2021 IEEE International Electron Devices Meeting (IEDM) · 2021 · 22 citations

Electrical Engineering, Gan Power Circuits, Engineering +13