Anurag Vohra

Fundamentals of Ge 1−x Sn x and Si y Ge 1−x-y Sn x RPCVD epitaxy

Joe Margetis, Aboozar Mosleh, Seyed Amir Ghetmiri et al. · Materials Science in Semiconductor Processing · 2016 · 42 citations

Engineering, Materials Engineering, Materials Science +13

Fabrication, Characterization, and Analysis of Ge/GeSn Heterojunction p-Type Tunnel Transistors

C. Schulte‐Braucks, Rahul Pandey, Redwan N. Sajjad et al. · IEEE Transactions on Electron Devices · 2017 · 32 citations

Engineering, Electrical Engineering, Materials Science +17

Very Low Temperature Epitaxy of Group-IV Semiconductors for Use in FinFET, Stacked Nanowires and Monolithic 3D Integration

Clément Porret, Andriy Hikavyy, Juan Fernando Gomez Granados et al. · ECS Journal of Solid State Science and Technology · 2019 · 31 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

1.2 kV Enhancement-Mode p-GaN Gate HEMTs on 200 mm Engineered Substrates

S. Kumar, Karen Geens, Anurag Vohra et al. · IEEE Electron Device Letters · 2024 · 27 citations · Full text

Engineering, Electrical Engineering, Materials Science +16

Epitaxial GeSn: impact of process conditions on material quality

Roger Loo, Yosuke Shimura, Shinichi Ike et al. · Semiconductor Science and Technology · 2018 · 25 citations

Engineering, Materials Engineering, Materials Science +17