Fundamentals of Ge 1−x Sn x and Si y Ge 1−x-y Sn x RPCVD epitaxy

Lasing in direct-bandgap GeSn alloy grown on Si

Stephan Wirths, Richard Geiger, Nils von den Driesch et al. · Nature Photonics · 2015 · 1.2K citations

Engineering, Materials Engineering, Materials Science +12

Undoped and <i>in-situ</i> B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition

Benjamin Vincent, Federica Gencarelli, H. Bender et al. · Applied Physics Letters · 2011 · 188 citations · Full text

Natural Sciences, Materials Science, Physics +16

Direct Bandgap Group IV Epitaxy on Si for Laser Applications

Nils von den Driesch, Daniela Stange, S. Wirths et al. · Chemistry of Materials · 2015 · 153 citations

Engineering, Materials Engineering, Materials Science +17

Group IV Photonics: Driving Integrated Optoelectronics

Richard Soref, Dan Buca, Shui-Qing Yu · Optics and Photonics News · 2016 · 119 citations

Natural Sciences, Materials Science, Physics +17

Characterization of GeSn materials for future Ge pMOSFETs source/drain stressors

Benjamin Vincent, Yosuke Shimura, Shotaro Takeuchi et al. · Microelectronic Engineering · 2010 · 105 citations

Engineering, Electrical Engineering, Materials Science +14