Sattar Al-Kabi - Concepedia

Concepedia

Author

Sattar Al-Kabi

University of Arkansas at Fayetteville ORCID

Also Known As

Al-Kabi, Sattar, Alkabi, Sattar, S. Al-Kabi, Sattar Al-Kabi, Sattar Al-kabi, Sattar Alkabi

44

Publications

1.3K

Citations

16

H-Index

37

Concepts

All Affiliations

University of Arkansas at Fayetteville University of Arkansas at Pine Bluff University of Massachusetts Boston ASM International Wilkes University

SA

About

Sattar Al-Kabi is an author at University of Arkansas at Fayetteville specializing in engineering, applied physics, and optoelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	14	16	1.1K
2	Applied Physics	14	16	1.1K
3	Materials Engineering	6	6	119
4	Electrical Engineering	4	4	375
5	Chemistry	1	1	14

Sattar Al-Kabi

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21

Publications

1.3K

Citations

16

H-Index

	Year	Citations
Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications Huong Tran, Thach Pham, Joe Margetis, ACS Photonics Optical MaterialsEngineeringOptoelectronic DevicesIntegrated CircuitsSilicon On Insulator	2019	230
An optically pumped 2.5 <i>μ</i>m GeSn laser on Si operating at 110 K Sattar Al-Kabi, Seyed Amir Ghetmiri, Joe Margetis, Applied Physics Letters Optical MaterialsEngineeringLaser ScienceLaser ApplicationsLaser Physics	2016	214
Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K Joe Margetis, Sattar Al-Kabi, Wei Du, ACS Photonics Optical MaterialsEngineeringLaser ScienceHighest Lasing TemperatureLaser Applications	2017	190
Investigation of GeSn Strain Relaxation and Spontaneous Composition Gradient for Low-Defect and High-Sn Alloy Growth Wei Dou, Mourad Benamara, Aboozar Mosleh, Scientific Reports	2018	145
Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications Yiyin Zhou, Wei Dou, Wei Du, Journal of Applied Physics Wide-bandgap SemiconductorEngineeringElectroluminescence SpectraOptoelectronic DevicesSemiconductors	2016	86
Optically pumped lasing at 3 μm from compositionally graded GeSn with tin up to 223% Wei Dou, Yiyin Zhou, Joe Margetis, Optics Letters Optical MaterialsEngineeringLaser ScienceLaser PhysicsLaser Applications	2018	77
Study of low-defect and strain-relaxed GeSn growth via reduced pressure CVD in H2 and N2 carrier gas J. Margetis, Aboozar Mosleh, Sattar Al-Kabi, Journal of Crystal Growth Electrical EngineeringEngineeringApplied PhysicsN2 Carrier GasStrain-relaxed Gesn Growth	2017	49
Study of a SiGeSn/GeSn/SiGeSn structure toward direct bandgap type-I quantum well for all group-IV optoelectronics Seyed Amir Ghetmiri, Yiyin Zhou, Joe Margetis, Optics Letters Materials ScienceWide-bandgap SemiconductorIi-vi SemiconductorAvailable PrecursorsEngineering	2017	45
Fundamentals of Ge 1−x Sn x and Si y Ge 1−x-y Sn x RPCVD epitaxy Joe Margetis, Aboozar Mosleh, Seyed Amir Ghetmiri, Materials Science in Semiconductor Processing Semiconductor TechnologySn XPhysicsApplied PhysicsGe 1−X	2016	41
Optical Characterization of Si-Based Ge1−x Sn x Alloys with Sn Compositions up to 12% Sattar Al-Kabi, Seyed Amir Ghetmiri, Joe Margetis, Journal of Electronic Materials Materials ScienceMaterials EngineeringSn CompositionsOptical MaterialsEngineering	2015	33

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