Investigation of GeSn Strain Relaxation and Spontaneous Composition Gradient for Low-Defect and High-Sn Alloy Growth

Calculation of critical layer thickness versus lattice mismatch for Ge<i>x</i>Si1−<i>x</i>/Si strained-layer heterostructures

R. People, J. C. Bean · Applied Physics Letters · 1985 · 1.7K citations

Engineering, Severe Plastic Deformation, Energy Balance +20

Mid-infrared photonics in silicon and germanium

Richard Soref · Nature Photonics · 2010 · 1.4K citations

Photonics, Optical Materials, Engineering +7

Lasing in direct-bandgap GeSn alloy grown on Si

Stephan Wirths, Richard Geiger, Nils von den Driesch et al. · Nature Photonics · 2015 · 1.2K citations

Materials Science, Materials Engineering, Engineering +3

Generation of misfit dislocations in semiconductors

P. M. J. Marée, J. C. Barbour, J. F. van der Veen et al. · Journal of Applied Physics · 1987 · 473 citations

Semiconductors, Semiconductor Technology, Engineering +10

Bond lengths around isovalent impurities and in semiconductor solid solutions

José Luı́s Martins, Alex Zunger · Physical review. B, Condensed matter · 1984 · 438 citations

Materials Science, Semiconductors, Ii-vi Semiconductor +13