Aboozar Mosleh

Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence

Seyed Amir Ghetmiri, Wei Du, Joe Margetis et al. · Applied Physics Letters · 2014 · 228 citations

Engineering, Materials Engineering, Materials Science +15

An optically pumped 2.5 <i>μ</i>m GeSn laser on Si operating at 110 K

Sattar Al-Kabi, Seyed Amir Ghetmiri, Joe Margetis et al. · Applied Physics Letters · 2016 · 216 citations

Engineering, Materials Engineering, Materials Science +16

Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K

Joe Margetis, Sattar Al-Kabi, Wei Du et al. · ACS Photonics · 2017 · 193 citations

Engineering, Materials Engineering, Materials Science +16

Systematic study of Ge1−xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics

Huong Tran, Wei Du, Seyed Amir Ghetmiri et al. · Journal of Applied Physics · 2016 · 156 citations

Natural Sciences, Materials Engineering, Materials Science +17

Investigation of GeSn Strain Relaxation and Spontaneous Composition Gradient for Low-Defect and High-Sn Alloy Growth

Wei Dou, Mourad Benamara, Aboozar Mosleh et al. · Scientific Reports · 2018 · 152 citations · Full text

Engineering, Materials Engineering, Materials Science +17