200 V GaN-on-SOI Smart Power Platform for Monolithic GaN Power ICs

Abstract

This paper demonstrates a 200 V GaN-on-SOI smart power integrated circuits (ICs) platform developped on 200 mm substrates. Depletion-mode (d-mode) MIS-HEMTs and Gated-Edge-Termination Schottky barrier diodes (GET-SBDs) have been successfully integrated in an enhancement-mode (e-mode) HEMT technology baseline. A variety of low-voltage analog/logic devices and passive components further supports the GaN ICs platform. These results significantly contribute to monolithic GaN integration for power ICs and create key opportunities for the development of GaN power circuits and complex converter topologies.