Modulation of charge trapping and current-conduction mechanism of TiO2-doped HfO2 gate dielectrics based MOS capacitors by annealing temperature

Temperature and frequency dependent electrical and dielectric properties of Al/SiO2/p-Si (MOS) structure

A. Tatarogˇlu, Ş. Altındal, M.M. Bülbül · Microelectronic Engineering · 2005 · 203 citations

Natural Sciences, Materials Science, Physics +12

Modulating the Interface Quality and Electrical Properties of HfTiO/InGaAs Gate Stack by Atomic-Layer-Deposition-Derived Al₂O₃ Passivation Layer

Gang He, Juan Gao, Hanshuang Chen et al. · ACS Applied Materials & Interfaces · 2014 · 202 citations

Engineering, Materials Engineering, Materials Science +17

Polarity effect on the temperature dependence of leakage current through HfO2/SiO2 gate dielectric stacks

Zhen Xu, Michel Houssa, Stefan De Gendt et al. · Applied Physics Letters · 2002 · 176 citations

Natural Sciences, Electrical Engineering, Materials Science +17

Microstructure optimization and optical and interfacial properties modulation of sputtering-derived HfO2 thin films by TiO2 incorporation

J.W. Zhang, Guangzhi He, L. P. Zhou et al. · Journal of Alloys and Compounds · 2014 · 176 citations

Natural Sciences, Materials Engineering, Materials Science +17

Interface control and modification of band alignment and electrical properties of HfTiO/GaAs gate stacks by nitrogen incorporation

Gang He, Jiangwei Liu, Hanshuang Chen et al. · Journal of Materials Chemistry C · 2014 · 149 citations

Engineering, Materials Engineering, Materials Science +17