Interface engineering and chemistry of Hf-based high-k dielectrics on III–V substrates

Gang He, Zhaoqi Sun

Surface Science Reports

Materials ScienceInterface ChemistryEngineeringHf-based High-k DielectricsIii–v Substrates +7

Modulating the Interface Quality and Electrical Properties of HfTiO/InGaAs Gate Stack by Atomic-Layer-Deposition-Derived Al₂O₃ Passivation Layer

Gang He, Juan Gao, Hanshuang Chen, +2

ACS Applied Materials & Interfaces

Interface control and modification of band alignment and electrical properties of HfTiO/GaAs gate stacks by nitrogen incorporation

Gang He, Jiangwei Liu, Hanshuang Chen, +4

Journal of Materials Chemistry C

EngineeringOptical Dielectric FunctionOptoelectronic DevicesNitrogen IncorporationSemiconductor Device +15

Facile fabrication of Ag/graphene oxide/TiO2 nanorod array as a powerful substrate for photocatalytic degradation and surface-enhanced Raman scattering detection

Yanfen Wang, Miao Zhang, Hai Yu, +4

Applied Catalysis B: Environmental

Materials ScienceEngineeringPlasmonic CatalysisNanomaterialsNanotechnology +8

Ultraviolet-Assisted Low-Thermal-Budget-Driven α-InGaZnO Thin Films for High-Performance Transistors and Logic Circuits

Yongchun Zhang, Gang He, Leini Wang, +3

ACS Nano

A unique Cu2O/TiO2 nanocomposite with enhanced photocatalytic performance under visible light irradiation

Yanfen Wang, Jiajia Tao, Xingzhi Wang, +4

Ceramics International

Materials ScienceUnique Cu2o/tio2 NanocompositeVisible Light IrradiationPhotochemistryNanomaterials +7

Enhanced optical and photocatalytic properties of Ag quantum dots-sensitized nanostructured TiO2/ZnO heterojunctions

Jiajia Tao, Zezhou Gong, Guang Yao, +7

Journal of Alloys and Compounds

Materials ScienceEngineeringPlasmonic CatalysisNanomaterialsNanotechnology +6

Fully solution-induced high performance indium oxide thin film transistors with ZrO_x high-k gate dielectrics

Li Zhu, Gang He, Jianguo Lv, +2

RSC Advances

Effect of dimethylaluminumhydride-derived aluminum oxynitride passivation layer on the interface chemistry and band alignment of HfTiO-InGaAs gate stacks

Gang He, Hanshuang Chen, Jianguo Lv, +2

APL Materials

Aluminium NitrideEngineeringNative OxideChemistryDimethylaluminumhydride-derived Aluminum +14

Passivation of Ge surface treated with trimethylaluminum and investigation of electrical properties of HfTiO/Ge gate stacks

Juan Gao, Gang He, Dongqi Xiao, +5

Journal of Material Science and Technology

Electrical EngineeringEngineeringNanoelectronicsSurface ScienceApplied Physics +4