Interface control and modification of band alignment and electrical properties of HfTiO/GaAs gate stacks by nitrogen incorporation

Abstract

Effects of nitrogen incorporation on the interface chemical bonding states, optical dielectric function, band alignment, and electrical properties of sputtering-derived HfTiO high-<italic>k</italic>gate dielectrics on GaAs substrates have been studied by angle resolved X-ray photoemission spectroscopy (ARXPS), spectroscopy ellipsometry (SE), and electrical measurements.