Hanshuang Chen

Modulating the Interface Quality and Electrical Properties of HfTiO/InGaAs Gate Stack by Atomic-Layer-Deposition-Derived Al₂O₃ Passivation Layer

Gang He, Juan Gao, Hanshuang Chen et al. · ACS Applied Materials & Interfaces · 2014 · 202 citations

Interface control and modification of band alignment and electrical properties of HfTiO/GaAs gate stacks by nitrogen incorporation

Gang He, Jiangwei Liu, Hanshuang Chen et al. · Journal of Materials Chemistry C · 2014 · 148 citations

Engineering, Optical Dielectric Function, Optoelectronic Devices +17

Full reconstruction of simplicial complexes from binary contagion and Ising data

Huan Wang, Chuang Ma, Hanshuang Chen et al. · Nature Communications · 2022 · 88 citations · Full text

Engineering, Ising Data, Interaction Network +17

Effect of dimethylaluminumhydride-derived aluminum oxynitride passivation layer on the interface chemistry and band alignment of HfTiO-InGaAs gate stacks

Gang He, Hanshuang Chen, Jianguo Lv et al. · APL Materials · 2013 · 65 citations · Full text

Aluminium Nitride, Engineering, Native Oxide +16

Statistical inference approach to structural reconstruction of complex networks from binary time series

Chuang Ma, Hanshuang Chen, Ying‐Cheng Lai et al. · Physical review. E · 2018 · 54 citations · Full text