Impact of barrier layer thickness on DC and RF performance of AlGaN/GaN high electron mobility transistors

Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures

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A new method for determining the FET small-signal equivalent circuit

G. Dambrine, A. Cappy, Frédéric Héliodore et al. · IEEE Transactions on Microwave Theory and Techniques · 1988 · 1.5K citations

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Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors

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Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy

I. P. Smorchkova, C. R. Elsass, J. P. Ibbetson et al. · Journal of Applied Physics · 1999 · 435 citations

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AlGaN/GaN HEMT With 300-GHz $f_{\max}$

J.W. Chung, W. E. Hoke, Eduardo M. Chumbes et al. · IEEE Electron Device Letters · 2010 · 379 citations · Full text

Engineering, Electrical Engineering, Materials Science +17