D. S. Rawal

Evidence of Fowler–Nordheim Tunneling in Gate Leakage Current of AlGaN/GaN HEMTs at Room Temperature

Sreenidhi Turuvekere, D. S. Rawal, Amitava DasGupta et al. · IEEE Transactions on Electron Devices · 2014 · 53 citations

Materials Engineering, Room Temperature, Electrical Engineering +15

Role of AlGaN/GaN interface traps on negative threshold voltage shift in AlGaN/GaN HEMT

Amit Malik, Chandan Sharma, Robert Laishram et al. · Solid-State Electronics · 2018 · 48 citations

Algan/gan Interface Traps, Wide-bandgap Semiconductor, Electrical Engineering +7

Impact of Gamma Radiations on Static, Pulsed <i>I–V</i>, and RF Performance Parameters of AlGaN/GaN HEMT

Ajay Kumar Visvkarma, Khushwant Sehra, Chanchal Saraswat et al. · IEEE Transactions on Electron Devices · 2022 · 33 citations

Wide-bandgap Semiconductor, Engineering, Radiation Physics +16

Effect of BCl3 concentration and process pressure on the GaN mesa sidewalls in BCl3/Cl2 based inductively coupled plasma etching

D. S. Rawal, B. K. Sehgal, R. Muralidharan et al. · Vacuum · 2012 · 31 citations

Electrical Engineering, Engineering, Gan Mesa +9

$\hbox{BCl}_{3}/\hbox{Cl}_{2}$-Based Inductively Coupled Plasma Etching of GaN/AlGaN Using Photoresist Mask

D. S. Rawal, Hitendra K. Malik, Vanita Agarwal et al. · IEEE Transactions on Plasma Science · 2012 · 30 citations

Materials Engineering, Wide-bandgap Semiconductor, Electrical Engineering +11