B. K. Sehgal

Micro-structural evaluation of Ti/Al/Ni/Au ohmic contacts with different Ti/Al thicknesses in AlGaN/GaN HEMTs

Somna S. Mahajan, Anuradha Dhaul, Robert Laishram et al. · Materials Science and Engineering B · 2014 · 33 citations

Materials Engineering, Materials Science, Electrical Engineering +11

Effect of BCl3 concentration and process pressure on the GaN mesa sidewalls in BCl3/Cl2 based inductively coupled plasma etching

D. S. Rawal, B. K. Sehgal, R. Muralidharan et al. · Vacuum · 2012 · 31 citations

Electrical Engineering, Engineering, Gan Mesa +9

$\hbox{BCl}_{3}/\hbox{Cl}_{2}$-Based Inductively Coupled Plasma Etching of GaN/AlGaN Using Photoresist Mask

D. S. Rawal, Hitendra K. Malik, Vanita Agarwal et al. · IEEE Transactions on Plasma Science · 2012 · 30 citations

Materials Engineering, Wide-bandgap Semiconductor, Electrical Engineering +11

Comparative study of GaN mesa etch characteristics in Cl2 based inductively coupled plasma with Ar and BCl3 as additive gases

D. S. Rawal, Henika Arora, B. K. Sehgal et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 2014 · 22 citations

Engineering, Cl2/ar Etching, Electron-beam Lithography +17

Experimental Study of the Influence of Process Pressure and Gas Composition on GaAs Etching Characteristics in Cl₂/BCl₃-Based Inductively Coupled Plasma

D. S. Rawal, B. K. Sehgal, R. Muralidharan et al. · Plasma Science and Technology · 2011 · 20 citations

Materials Science, Electrical Engineering, Plasma Electronics +14