Robert Laishram

Role of AlGaN/GaN interface traps on negative threshold voltage shift in AlGaN/GaN HEMT

Amit Malik, Chandan Sharma, Robert Laishram et al. · Solid-State Electronics · 2018 · 48 citations

Engineering, Electrical Engineering, Materials Science +16

Micro-structural evaluation of Ti/Al/Ni/Au ohmic contacts with different Ti/Al thicknesses in AlGaN/GaN HEMTs

Somna S. Mahajan, Anuradha Dhaul, Robert Laishram et al. · Materials Science and Engineering B · 2014 · 34 citations

Engineering, Electrical Engineering, Materials Science +17

Cumulative dose <i>γ</i> -irradiation effects on material properties of AlGaN/GaN hetero-structures and electrical properties of HEMT devices

Chandan Sharma, Ajay Kumar Visvkarma, Robert Laishram et al. · Semiconductor Science and Technology · 2019 · 34 citations

Engineering, Materials Engineering, Materials Science +17

Impact of Gamma Radiations on Static, Pulsed <i>I–V</i>, and RF Performance Parameters of AlGaN/GaN HEMT

Ajay Kumar Visvkarma, Khushwant Sehra, Robert Laishram et al. · IEEE Transactions on Electron Devices · 2022 · 33 citations

Engineering, Electrical Engineering, Electronic Materials +14

Comparative study of Au and Ni/Au gated AlGaN/GaN high electron mobility transistors

Ajay Kumar Visvkarma, Chandan Sharma, Robert Laishram et al. · AIP Advances · 2019 · 27 citations · Full text

Engineering, Electrical Engineering, Materials Science +17