Sreenidhi Turuvekere

Gate Leakage Mechanisms in AlGaN/GaN and AlInN/GaN HEMTs: Comparison and Modeling

Sreenidhi Turuvekere, Naveen Karumuri, A. Azizur Rahman et al. · IEEE Transactions on Electron Devices · 2013 · 282 citations

Semiconductors, Gate Leakage Mechanisms, Electrical Engineering +14

A Continuous Analytical Model for 2-DEG Charge Density in AlGaN/GaN HEMTs Valid for All Bias Voltages

Naveen Karumuri, Sreenidhi Turuvekere, Nandita DasGupta et al. · IEEE Transactions on Electron Devices · 2014 · 65 citations

Wide-bandgap Semiconductor, Electrical Engineering, Algan/gan Hemts Valid +13

Positive Shift in Threshold Voltage for Reactive-Ion- Sputtered Al₂O₃/AlInN/GaN MIS-HEMT

Gourab Dutta, Sreenidhi Turuvekere, Naveen Karumuri et al. · IEEE Electron Device Letters · 2014 · 57 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +15

Evidence of Fowler–Nordheim Tunneling in Gate Leakage Current of AlGaN/GaN HEMTs at Room Temperature

Sreenidhi Turuvekere, D. S. Rawal, Amitava DasGupta et al. · IEEE Transactions on Electron Devices · 2014 · 53 citations

Materials Engineering, Room Temperature, Electrical Engineering +15

Effect of Barrier Layer Thickness on Gate Leakage Current in AlGaN/GaN HEMTs

Sreenidhi Turuvekere, Amitava DasGupta, Nandita DasGupta · IEEE Transactions on Electron Devices · 2015 · 34 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +14