Enhancement-Mode InAlN/GaN Power MOSHEMT on Silicon With Schottky Tri-Drain Extension

Concepts

EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsMicroelectronicsSemiconductor DevicesComplementary Metal-oxide-semiconductor TechnologyDevice CharacterizationField-effect TransistorsMetal-oxide-semiconductor Field-effect TransistorsNanowiresWide Band Gap SemiconductorsBreakdown VoltageBreakdown Voltage OptimizationHigh-voltage BreakdownNanowire Field-effect TransistorsSchottky Barrier CharacteristicsSiliconThreshold Voltage

Abstract

This study demonstrates an enhancement-mode (E-mode) InAlN/GaN MOSHEMT on a silicon substrate with a Schottky tri-drain extension (STDE) to yield a large breakdown voltage (V BD ) while maintaining a low on-resistance (R on ). The E-mode operation is realized by a recessed tri-gate nanowire structure. The STDE functions as a drain-connected field plate (FP) to effectively distribute the electric field (E-field) around the drain contact edge, improving the V BD . Moreover, through the metal of the STDE directly contacting the 2-D electron gas (2-DEG) from the sidewalls, a low specific R on (R on, sp ) is achieved. The proposed device with a gate-to-drain length (L GD ) of 5 μm exhibits a threshold voltage (V TH ) of +0.9 V, large maximum drain current (I D, max ) of 815 ± 27 mA/mm, high I on /I off ratio of 1010, steep subthreshold swing (SS) of 67 mV/decade, superior V BD of 830 V, and low R on, sp of 0.74 ± 0.04 mΩ·cm 2 . With L GD of 10 μm, a V BD of 1190 V is achieved, corresponding to a R on, sp of 1.39 ± 0.07 mΩ·cm 2 . These results reveal great potential for future E-mode power device applications.

References

GaN-on-Si Power Technology: Devices and Applications

Kevin J. Chen, Oliver D. Häberlen, Alex Lidow et al. · IEEE Transactions on Electron Devices · 2017 · 1.6K citations

Engineering, Electrical Engineering, Materials Science +17

Tri-Gate Normally-Off GaN Power MISFET

Bin Lu, Elison Matioli, Tomás Palacios · IEEE Electron Device Letters · 2012 · 236 citations · Full text

Engineering, Electrical Engineering, Microelectronics +16

Breakdown Enhancement of AlGaN/GaN HEMTs on 4-in Silicon by Improving the GaN Quality on Thick Buffer Layers

S. Lawrence Selvaraj, Takaaki Suzue, Takashi Egawa · IEEE Electron Device Letters · 2009 · 213 citations

Engineering, Electrical Engineering, Materials Science +17

High-Performance Normally-Off ${\rm Al}_{2}{\rm O}_{3}/{\rm GaN}$ MOSFET Using a Wet Etching-Based Gate Recess Technique

Ye Wang, Maojun Wang, Bing Xie et al. · IEEE Electron Device Letters · 2013 · 180 citations

Engineering, Electrical Engineering, Materials Science +17

Gate-Recessed Enhancement-Mode InAlN/AlN/GaN HEMTs With 1.9-A/mm Drain Current Density and 800-mS/mm Transconductance

Ronghua Wang, P. Saunier, Xiu Xing et al. · IEEE Electron Device Letters · 2010 · 158 citations

Engineering, Electrical Engineering, Materials Science +15