S. Lawrence Selvaraj

Breakdown Enhancement of AlGaN/GaN HEMTs on 4-in Silicon by Improving the GaN Quality on Thick Buffer Layers

S. Lawrence Selvaraj, Takaaki Suzue, Takashi Egawa · IEEE Electron Device Letters · 2009 · 213 citations

Engineering, Electrical Engineering, Materials Science +17

Buffer Thickness Contribution to Suppress Vertical Leakage Current With High Breakdown Field (2.3 MV/cm) for GaN on Si

Iruthayaraj Beaula Rowena, S. Lawrence Selvaraj, Takashi Egawa · IEEE Electron Device Letters · 2011 · 136 citations

Engineering, Electrical Engineering, Materials Science +17

Improved Power Device Figure-of-Merit ($4.0\times 10^{8}$ V$^{2}$ $\Omega^{-1}$ cm$^{-2}$) in AlGaN/GaN High-Electron-Mobility Transistors on High-Resistivity 4-in. Si

S. Arulkumaran, S. Vicknesh, Geok Ing Ng et al. · Applied Physics Express · 2011 · 58 citations

Engineering, Electrical Engineering, Materials Science +17

Al N ∕ Al Ga N ∕ Ga N metal-insulator-semiconductor high-electron-mobility transistor on 4in. silicon substrate for high breakdown characteristics

S. Lawrence Selvaraj, Tsuneo Ito, Yutaka Terada et al. · Applied Physics Letters · 2007 · 56 citations

Engineering, Electrical Engineering, Materials Science +17

Influence of Deep Pits on the Breakdown of Metalorganic Chemical Vapor Deposition Grown AlGaN/GaN High Electron Mobility Transistors on Silicon

S. Lawrence Selvaraj, Takaaki Suzue, Takashi Egawa · Applied Physics Express · 2009 · 42 citations

Engineering, Electrical Engineering, Materials Science +17