Ultrahigh-temperature oxidation of 4H-SiC (0 0 0 1) and gate oxide reliability dependence on oxidation temperature

Material science and device physics in SiC technology for high-voltage power devices

Tsunenobu Kimoto · Japanese Journal of Applied Physics · 2015 · 1.1K citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide

Gil Yong Chung, C. C. Tin, John R. Williams et al. · IEEE Electron Device Letters · 2001 · 633 citations

Engineering, Electrical Engineering, Materials Science +17

Density of interface states, electron traps, and hole traps as a function of the nitrogen density in SiO2 on SiC

John Rozen, Sarit Dhar, M. E. Zvanut et al. · Journal of Applied Physics · 2009 · 179 citations

Engineering, Electrical Engineering, Materials Science +17

Generation of very fast states by nitridation of the SiO2/SiC interface

Hironori Yoshioka, Takashi Nakamura, Tsunenobu Kimoto · Journal of Applied Physics · 2012 · 167 citations · Full text

Engineering, Materials Science, Physics +17

Removal of near-interface traps at SiO2/4H–SiC (0001) interfaces by phosphorus incorporation

Dai Okamoto, Hiroshi Yano, Tomoaki Hatayama et al. · Applied Physics Letters · 2010 · 147 citations

Engineering, Materials Engineering, Materials Science +17