Material science and device physics in SiC technology for high-voltage power devices

TLDR

Power semiconductor devices are essential for power conversion, and silicon carbide (SiC) has emerged as a promising wide‑bandgap material for high‑voltage, low‑loss applications, yet fundamental knowledge of its material properties, defect electronics, and device reliability remains limited. This review aims to describe the current features and status of SiC power devices. The review examines SiC material science and device physics, covering impurity doping, extended and point defects, their effects on performance and reliability, and fundamental issues of SiC Schottky barrier diodes and power MOSFETs. Recent advances in SiC crystal growth and processing have enabled the production of medium‑voltage (600–1700 V) SiC Schottky barrier diodes and power MOSFETs.

Abstract

Power semiconductor devices are key components in power conversion systems. Silicon carbide (SiC) has received increasing attention as a wide-bandgap semiconductor suitable for high-voltage and low-loss power devices. Through recent progress in the crystal growth and process technology of SiC, the production of medium-voltage (600–1700 V) SiC Schottky barrier diodes (SBDs) and power metal–oxide–semiconductor field-effect transistors (MOSFETs) has started. However, basic understanding of the material properties, defect electronics, and the reliability of SiC devices is still poor. In this review paper, the features and present status of SiC power devices are briefly described. Then, several important aspects of the material science and device physics of SiC, such as impurity doping, extended and point defects, and the impact of such defects on device performance and reliability, are reviewed. Fundamental issues regarding SiC SBDs and power MOSFETs are also discussed.