Nanoscale Research Letters · 2019 · 66 citations · 22 references
Natural SciencesMaterials EngineeringMaterials ScienceInterface ScienceSemiconductor MaterialsThin FilmsAtomic Layer DepositionInterface EngineeringSemiconductor InterfacesSemiconductor PhysicsSilicon MaterialsSurface PhysicsAnnealing EffectsAnnealing Temperature EffectsPost-deposition AnnealingRapid Thermal AnnealingSiliconSilicon DioxideSilicon InterfacesThermal Annealing
In this work, hafnium oxide (HfO 2 ) thin films are deposited on p-type Si substrates by remote plasma atomic layer deposition on p-type Si at 250 °C, followed by a rapid thermal annealing in nitrogen. Effect of post-annealing temperature on the crystallization of HfO 2 films and HfO 2 /Si interfaces is investigated. The crystallization of the HfO 2 films and HfO 2 /Si interface is studied by field emission transmission electron microscopy, X-ray photoelectron spectroscopy, X-ray diffraction, and atomic force microscopy. The experimental results show that during annealing, the oxygen diffuse from HfO 2 to Si interface. For annealing temperature below 400 °C, the HfO 2 film and interfacial layer are amorphous, and the latter consists of HfO 2 and silicon dioxide (SiO 2 ). At annealing temperature of 450-550 °C, the HfO 2 film become multiphase polycrystalline, and a crystalline SiO 2 is found at the interface. Finally, at annealing temperature beyond 550 °C, the HfO 2 film is dominated by single-phase polycrystalline, and the interfacial layer is completely transformed to crystalline SiO 2 .
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