Semiconductor Science and Technology · 2019 · 13 citations · 16 references
EngineeringElectrical EngineeringMaterials EngineeringElectronic MaterialsRadiation PhysicsSemiconductor DevicesCarrier TransportDevice CharacterizationDevice ModelingRadiation Damage In MaterialsSemiconductor ReliabilityShort-channel EffectsElectrical PropertiesElectrical Properties AnalysisGate Oxide DegradationIrradiation ConditionsRadiation EffectsRadiation Effects On ReliabilityRadiation-tolerant Semiconductor DevicesSilicon Carbide Power Electronics
Abstract The effect of irradiation with 15 MeV protons on the electrical properties of high-power vertical 4H-SiC MOSFETs of 1.2 kV class has been studied experimentally with doses in the range 0 ≤ Φ ≤ 10 14 cm −2 . Dose Φ cr , signifying the complete degradation of the device, corresponds to the condition Φ cr ≈ n 0 / η e ( η e is the electron removal rate and n 0 is the electron concentration in the unirradiated drift layer). In the devices under study, Φ cr is 10 14 cm −2 . The effect of irradiation on the leakage current, gate-drain capacitance, transconductance, and field mobility was examined.
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