IEEE Transactions on Device and Materials Reliability · 2019 · 21 citations · 6 references
EngineeringComputational EngineeringElectrical EngineeringHeat TransferSemiconductor DevicesThermal AnalysisDevice CharacterizationDevice ModelingDevice ReliabilityDevice SimulationHeat Transfer ModelingSemiconductor ReliabilityContact ResistanceLifetime EstimationLifetime ModelingLifetime PredictionPower Device ReliabilityThermal CyclingThermal Cycling TestingThermal Reliability
The purpose of this paper is to predict the device lifetime under a power cycling test by a simulation method that is based on a distributed self-heating SPICE model. Correlation between numeric extrapolation and experimental data is done by considering the Repetitive Avalanche test, a particular active temperature cycling that evaluates the ruggedness of a power device. The considered failure mechanism is due to front metal aging that produces contact resistance degradation. This phenomenon is strongly dependent on temperature, and by the proposed simulation tool, validated with experimental data, it is possible to evaluate the accurate temperature map and, consequently, predict the lifetime.
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Fast thermal fatigue on top metal layer of power devices
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