IEEE Journal of Solid-State Circuits · 1998 · 15 citations · 5 references
EngineeringElectrical EngineeringElectronic MaterialsMicroelectronicsSemiconductor DevicesDevice CharacterizationDevice ModelingDevice ScalingDevice SimulationHigh-frequency Semiconductor DevicesSemiconductor PhysicsBicmos TechnologyCmos ScalingCompact Model Parameter ExtractionCompact ModelingDevice Scaling EffectsField-effect Transistor SimulationLarge-signal ModelingSige Bicmos Design
A scaleable, statistical model has been developed for silicon germanium heterojunction transistors (SiGe HBTs), which are components of a commercially available BiCMOS technology for high-frequency applications. The SPICE Gummel-Poon (SGP) model parameters are scaled, and statistics added, using language features built into HSPICE, DC and AC fit is good over a wide range in emitter sizes, allowing an open-ended set of devices to be used with valid modeling capabilities. Features of IBM's HBT technology that contribute to the scaleability of the technology are discussed.
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Joachim N. Burghartz, J.Y.-C. Sun, C. Stanis et al. · IEEE Transactions on Electron Devices · 1992 · 53 citations