Large-signal Modeling
Large-Signal Modeling is a semiconductor device modeling methodology that characterizes the nonlinear behavior of bipolar junction transistors and high-frequency semiconductor devices under significant input signal excitation, distinguishing itself from small-signal approaches by accounting for large-signal-induced nonlinearities and dynamic operating point variations.
779
Publications
28.4K
Citations
1.8K
Authors
507
Institutions
Publications per year
2017–2026
84
779
Large-Signal Behavior of Junction Transistors
J. Ebers, J.L. Moll · Proceedings of the IRE · 1954 · 604 citations
Olivier Jardel, Fabien de Groote, Tibault Reveyrand et al. · IEEE Transactions on Microwave Theory and Techniques · 2007 · 291 citations
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United States Naval Research Laboratory
Washington, United States
17 h-index
43 publications
1.8K citations
Agilent Technologies (United States)
Santa Clara, United States
17 h-index
80 publications
3.7K citations

University of Bologna
Bologna, Italy
16 h-index
47 publications
1.7K citations
KU Leuven
Leuven, Belgium
16 h-index
40 publications
1.2K citations

University of Electronic Science and Technology of China
Chengdu, China
15 h-index
60 publications
2.5K citations
Chalmers University of Technology
Gothenburg, Sweden
15 h-index
59 publications
4.1K citations

Centre National de la Recherche Scientifique
Paris, France
15 h-index
66 publications
3.2K citations
University of Ferrara
Ferrara, Italy
12 h-index
32 publications
835 citations
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129 publications · 7.5K citations
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66 publications · 2.2K citations
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33 publications · 1.9K citations
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24 publications · 505 citations
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13 publications · 301 citations
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