Large-signal Modeling

Large-Signal Modeling is a semiconductor device modeling methodology that characterizes the nonlinear behavior of bipolar junction transistors and high-frequency semiconductor devices under significant input signal excitation, distinguishing itself from small-signal approaches by accounting for large-signal-induced nonlinearities and dynamic operating point variations.

779

Publications

28.4K

Citations

1.8K

Authors

507

Institutions

Publications per year

2017–2026

84

Authors

1.8K

  1. DE
    David E. Root

    Broad Institute, United States

    21 publications · 1.1K citations

    18

    h-index

  2. DS
    Dominique Schreurs

    KU Leuven, Belgium

    25 publications · 756 citations

    16

    h-index

  3. GV
    G. Vannini

    University of Ferrara, Italy

    17 publications · 527 citations

    13

    h-index

  4. AJ
    Anwar Jarndal

    University of Sharjah, United Arab Emirates

    14 publications · 634 citations

    13

    h-index

  5. FF
    F. Filicori

    University of Bologna, Italy

    13 publications · 492 citations

    13

    h-index

1–5 of 1.8K

Venues

  1. 47

    h-index

  2. IEEE Transactions on Electron Devices

    66 publications · 2.2K citations

    28

    h-index

  3. IEEE Transactions on Power Electronics

    33 publications · 1.9K citations

    27

    h-index

  4. Electronics Letters

    24 publications · 505 citations

    15

    h-index

  5. Solid-State Electronics

    13 publications · 301 citations

    13

    h-index

1–5