D.K. Jadus

A 0.18 μm BiCMOS technology featuring 120/100 GHz (f/sub T//f/sub max/) HBT and ASIC-compatible CMOS using copper interconnect

Alvin Joseph, D. Coolbaugh, M. Zierak et al. · 2002 · 129 citations

Engineering, Vlsi Design, Ge Ramp +18

Temperature dependence of Q and inductance in spiral inductors fabricated in a silicon-germanium/BiCMOS technology

R. Groves, D.L. Harame, D.K. Jadus · IEEE Journal of Solid-State Circuits · 1997 · 87 citations

Engineering, Temperature Dependence, Interconnect (Integrated Circuits) +16

The realization of a GaAs—Ge wide band gap emitter transistor

D.K. Jadus, D.L. Feucht · IEEE Transactions on Electron Devices · 1969 · 44 citations

High Q inductors in a SiGe BiMOS process utilizing a thick metal process add-on module

R. Groves, J. Malinowski, R. Volant et al. · 2003 · 38 citations

Electrical Engineering, Inductor Q, Engineering +11

Temperature dependence of Q in spiral inductors fabricated in a silicon-germanium/BiCMOS technology

R. Groves, K. Stein, D.L. Harame et al. · 2002 · 29 citations

Electrical Engineering, Engineering, Rf Semiconductor +14