J. Malinowski

A 0.18 μm BiCMOS technology featuring 120/100 GHz (f/sub T//f/sub max/) HBT and ASIC-compatible CMOS using copper interconnect

Alvin Joseph, D. Coolbaugh, M. Zierak et al. · 2002 · 129 citations

Engineering, Vlsi Design, Ge Ramp +18

Manufacturability demonstration of an integrated SiGe HBT technology for the analog and wireless marketplace

D. Ahlgren, M. Gilbert, D. Greenberg et al. · 2002 · 87 citations

Engineering, Vlsi Design, Device Integration +17

Integrated RF components in a SiGe bipolar technology

Joachim N. Burghartz, M. Soyuer, K.A. Jenkins et al. · IEEE Journal of Solid-State Circuits · 1997 · 81 citations

Electrical Engineering, Engineering, Inductance Values +12

A SiGe HBT BiCMOS technology for mixed signal RF applications

D. Ahlgren, G. Freeman, S. Subbanna et al. · 2002 · 66 citations

Engineering, Vlsi Design, Electromagnetic Compatibility +16

SiGe HBT technology: device and application issues

D.L. Harame, L.E. Larson, M. Case et al. · 2002 · 48 citations

Electrical Engineering, Polysilicon Emitter, Engineering +11