Publication | Closed Access
High Q inductors in a SiGe BiMOS process utilizing a thick metal process add-on module
38
Citations
11
References
2003
Year
Unknown Venue
Electrical EngineeringInductor QEngineeringDesign TradeoffsRf SemiconductorHigh-frequency DeviceElectronic EngineeringApplied PhysicsSige Bimos ProcessHigh Q InductorsSilicon On InsulatorMicroelectronicsSemiconductor DeviceThick Metallization
Design tradeoffs for the optimization of inductor Q have been analyzed, and thick metallization has been identified as the most promising technology enhancement. Peak Qs approaching 19 have been demonstrated using thick metal.
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