G. Freeman

Half-terahertz operation of SiGe HBTs

R. Krithivasan, Yuan Lu, John D. Cressler et al. · IEEE Electron Device Letters · 2006 · 101 citations

Engineering, Electrical Engineering, Physics +16

A 210-GHz f/sub T/ SiGe HBT with a non-self-aligned structure

S.J. Jeng, B. Jagannathan, Jae-Sung Rieh et al. · IEEE Electron Device Letters · 2001 · 88 citations

Engineering, Electrical Engineering, Materials Science +17

A simple four-port parasitic deembedding methodology for high-frequency scattering parameter and noise characterization of SiGe HBTs

Qingqing Liang, John D. Cressler, Guofu Niu et al. · IEEE Transactions on Microwave Theory and Techniques · 2003 · 78 citations

Engineering, Electrical Engineering, Microelectronics +16

The revolution in SiGe: impact on device electronics

D.L. Harame, Steven J. Koester, G. Freeman et al. · Applied Surface Science · 2004 · 56 citations

Engineering, Electrical Engineering, Electronic Materials +11

Product applications and technology directions with SiGe BiCMOS

Alvin Joseph, J. Dunn, G. Freeman et al. · IEEE Journal of Solid-State Circuits · 2003 · 45 citations

Engineering, Electrical Engineering, Electronic Materials +16