Qingqing Liang

A simple four-port parasitic deembedding methodology for high-frequency scattering parameter and noise characterization of SiGe HBTs

Qingqing Liang, John D. Cressler, Guofu Niu et al. · IEEE Transactions on Microwave Theory and Techniques · 2003 · 78 citations

Engineering, Radio Frequency, High-frequency Scattering Parameter +20

Cryogenic Operation of Third-Generation, 200-GHz Peak-<tex>$f_T$</tex>, Silicon–Germanium Heterojunction Bipolar Transistors

B. Banerjee, S. Venkataraman, Yuan Lu et al. · IEEE Transactions on Electron Devices · 2005 · 47 citations

Electrical Engineering, Semiconductor Device, Cryogenic Operation +13

Proton radiation effects in vertical SiGe HBTs fabricated on CMOS-compatible SOI

T. Chen, Akil K. Sutton, Marco Bellini et al. · IEEE Transactions on Nuclear Science · 2005 · 19 citations

Electrical Engineering, Cmos-compatible Soi, Engineering +11

Reliability issues associated with operating voltage constraints in advanced SiGe HBTs

Curtis M. Grens, John D. Cressler, Joel M. Andrews et al. · 2005 · 18 citations

Reliability Issues, Electrical Engineering, Reliability Engineering +15